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參數(shù)資料
| 型號(hào)： | MMSF3300R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6.7 A, 30 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | MMSF3300R2 |
MMSF3300
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
–
24
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
0.004
0.5
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
–
1.9
4.4
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
–
10
16
12.5
20
m
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc)
gFS
3.0
18
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vd
V
0 Vd
Ciss
–
1700
–
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
600
–
Transfer Capacitance
f = 1.0 MHz)
Crss
–
200
–
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
–
21
40
ns
Rise Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS =45Vdc
tr
–
45
90
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 6.0 )
td(off)
–
40
80
Fall Time
RG 6.0 )
tf
–
40
80
Turn–On Delay Time
td(on)
–
12
25
ns
Rise Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS =10Vdc
tr
–
12
25
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 )
td(off)
–
55
110
Fall Time
RG 6.0 )
tf
–
39
80
Gate Charge
QT
–
45
60
nC
(VDS = 15 Vdc, ID = 2.0 Adc,
Q1
–
5.1
–
(VDS 15 Vdc, ID 2.0 Adc,
VGS = 10 Vdc)
Q2
–
14
–
Q3
–
13
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
–
0.78
0.60
1.1
–
Vdc
Reverse Recovery Time
trr
–
40
–
ns
(IS = 3.5 Adc, VGS = 0 Vdc,
ta
–
21
–
(IS 3.5 Adc, VGS 0 Vdc,
dIS/dt = 100 A/s)
tb
–
19
–
Reverse Recovery Stored Charge
QRR
–
0.043
–
C
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
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