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參數(shù)資料
| 型號： | MMSF3300R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 9.1 A, 30 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 229K |
| 代理商： | MMSF3300R2 |
MMSF3300
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
4
8
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
2.5
4.0
0
4
8
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
23
4
10
0
0.20
0.30
02
4
6
8
16
0.016
0.018
0.020
0.008
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.0
510
15
30
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 125°C
25
°C
–55
°C
TJ = 25°C
VGS = 0 V
ID = 5.0 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
ID = 10 A
3.0
3.5
56
78
9
10
10 V
– 50
– 25
0
25
50
75
100
125
150
TJ = 125°C
1.0
10
20
25
100
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.25
0.50
1.25
0.75
1.00
1.50
1.75
2.00
2
TJ = 25°C
1
6
2
6
10
0.10
0.002
0.004
0.006
0
0.5
0
0.1
3
7
5
9
3
7
1
5
9
0.15
0.25
0.05
0.014
0.010
0.012
12
6.0 V
4.5 V
4.1 V
3.7 V
3.3 V
3.1 V
2.9 V
25
°C
VGS = 2.7 V
10 V
3.5 V
14
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