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參數資料
| 型號： | MMSF3300R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 9.1 A, 30 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 5/12頁 |
| 文件大?。?/td> | 229K |
| 代理商： | MMSF3300R2 |
MMSF3300
2
Motorola TMOS Power MOSFET Transistor Device Data
POWER RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp
≤ 10 ms)
Mounted on 1 inch square
FR–4 or G10 board
ID
IDM
11.5
8.2
50
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
PD
2.5
20
Watts
mW/
°C
Thermal Resistance — Junction–to–Ambient
t
≤ 10 seconds
R
θJA
50
°C/W
Continuous Source Current (Diode Conduction)
t
≤ 10 seconds
IS
3.0
Adc
Parameter
Symbol
Value
Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp
≤ 10 ms)
Mounted on 1 inch square
FR–4 or G10 board
ID
IDM
9.1
6.5
50
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
PD
1.6
12.5
Watts
mW/
°C
Thermal Resistance — Junction–to–Ambient
Steady State
R
θJA
80
°C/W
Continuous Source Current (Diode Conduction)
Steady State
IS
2.0
Adc
Parameter
Symbol
Value
Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp
≤ 10 ms)
Mounted on minimum recommended
FR–4 or G10 board
ID
IDM
9.1
6.5
50
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
PD
1.6
12.5
Watts
mW/
°C
Thermal Resistance — Junction–to–Ambient
t
≤ 10 seconds
R
θJA
80
°C/W
Continuous Source Current (Diode Conduction)
t
≤ 10 seconds
IS
2.0
Adc
Parameter
Symbol
Value
Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp
≤ 10 ms)
Mounted on minimum recommended
FR–4 or G10 board
ID
IDM
6.7
4.7
50
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
PD
0.8
6.7
Watts
mW/
°C
Thermal Resistance — Junction–to–Ambient
Steady State
R
θJA
150
°C/W
Continuous Source Current (Diode Conduction)
Steady State
IS
1.0
Adc
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