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參數(shù)資料
| 型號： | MMSF3300R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 9.1 A, 30 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 229K |
| 代理商： | MMSF3300R2 |
MMSF3300
8
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 14. Thermal Response — Various Duty Cycles
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
t, TIME (seconds)
Rthja(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
1000
10
1
D = 0.5
SINGLE PULSE
1E–05
1E–04
1E–03
1E–02
1E–01
0.2
0.01
1E+03
0.1
R
θJA(t) = r(t) RθJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TA = P(pk) R
θJA(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
0.02
0.05
0.1
Figure 15. Thermal Response — Various
Mounting/Measurement Conditions
t, TIME (seconds)
Rthja(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
10,000
100
10
1E–03
1E–02
1E–01
1E+00
1E+01
1E+02
1E+03
1
1000
Figure 16. Diode Reverse Recovery Waveform
0.01
t, TIME (seconds)
20
40
0.1
0
80
10
1
60
POWER
(W)
Figure 17. Single Pulse Power
Rthja, 1 INCH PAD
Rthjl, MIN PAD
CHIP
JUNCTION
R1
C1
R2
C2
R3
C3
R4
C4
R5
C5
AMBIENT
1
2
3
4
5
0.075
1.11
6.2
74
65.3
1.242
19.55
242
982
18,050
0.073
0.84
14.6
28
39.8
0.412
5.16
123
706
14,646
0.060
0.57
6.4
5.3
2.7
0.016
0.17
2.1
158
6,256
RC
MIN PAD, ja
RC
1 INCH, ja
RC
MIN PAD, jl
Rthja, MIN PAD
1E+00
1E+01
1E+02
DUTY CYCLE
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
NOTE: SPICE
and SABER model data for Motorola power devices is available at http://design–net.sps.mot.com/home2/models
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