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參數(shù)資料
| 型號(hào)： | MMSF10N03ZR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 278K |
| 代理商： | MMSF10N03ZR2 |
MMSF10N03Z
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
8.0
16
20
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
0
0.5
1.0
0
10
15
20
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
2.0
4.0
10
0
0.04
0.06
0
5.0
10
15
20
0.020
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus
Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
1.5
2.0
0
4.0
20
1.0
100
10,000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 100°C
25
°C
55
°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
1.5
2.0
2.5
6.0
8.0
4.5 V
50
25
0
25
50
75
100
125
150
TJ = 125°C
1.0
10
8.0
25
°C
100
°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
0.5
1.0
1.5
2.0
4.0
10 V
VGS = 2.7 V
3.1 V
4.5 V
TJ = 25°C
12
5.0
0.03
0.01
0.05
0.005
0.010
0.015
0
0.5
0
0.01
12
1000
16
VGS = 10 V
ID = 5.0 A
ID = 10 A
TJ = 25°C
0.02
1.9 V
2.5 V
2.3 V
2.1 V
3.0
0.1
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