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參數(shù)資料
| 型號(hào)： | MMSF10N03ZR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 751-07, SOP-8 |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大?。?/td> | 278K |
| 代理商： | MMSF10N03ZR2 |
MMSF10N03Z
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Max
Unit
DraintoSource Voltage
VDSS
30
Vdc
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR
30
Vdc
GatetoSource Voltage Continuous
VGS
± 20
Vdc
Drain Current Pulsed Drain Current (Note 3)
ID
IDM
10
7.7
50
Adc
PD
2.5
20
Watts
mW/°C
PD
1.6
12
Watts
mW/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25 W)
EAS
1000
mJ
THERMAL RESISTANCE
Parameter
Symbol
Typ
Max
Unit
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RqJA
50
80
°C/W
1. When mounted on 1″ square FR4 or G10 board (VGS = 10 V, @ 10 seconds).
2. When mounted on minimum recommended FR4 or G10 board (VGS = 10 V, @ Steady State).
3. Repetitive rating; pulse width limited by maximum junction temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
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| MMSF1310R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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