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參數(shù)資料
| 型號： | MMSF10N03ZR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 278K |
| 代理商： | MMSF10N03ZR2 |
MMSF10N03Z
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
65
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
μAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
3.0
μAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.2
3.5
1.7
Vdc
mV/°C
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
10
13
18
mΩ
gFS
7.0
13
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
720
1010
pF
Output Capacitance
Coss
570
800
Transfer Capacitance
Crss
78
110
SWITCHING CHARACTERISTICS (Note 5)
TurnOn Delay Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
td(on)
35
70
ns
Rise Time
tr
105
210
TurnOff Delay Time
td(off)
970
1940
Fall Time
tf
550
1100
Gate Charge
See Figure 8
(VDS = 15 Vdc, ID = 2.0 Adc,
QT
46
64
nC
Q1
3.8
Q2
11
Q3
8.1
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 10 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.80
0.70
1.1
Vdc
Reverse Recovery Time
(IS = 2.3 Adc, VGS = 0 Vdc,
trr
460
ns
ta
180
tb
280
Reverse Recovery Stored Charge
QRR
4.2
μC
4. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
6. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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