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參數(shù)資料
| 型號： | MMG2401NR2 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | Indium Gallium Phosphorus HBT - WLAN Power Amplifier |
| 中文描述： | 銦鎵磷異質(zhì)結(jié)雙極晶體管- WLAN功率放大器 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 186K |
| 代理商： | MMG2401NR2 |
MMG2401NR2
1
RF Device Data
Freescale Semiconductor
Indium Gallium Phosphorus HBT
WLAN Power Amplifier
Designed for 802.11g and dual mode applications with frequencies from
2400 to 2500 MHz
.
26.5 dBm P1dB @ 2450 MHz
Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB)
High Gain, High Efficiency and High Linearity
EVM = 3% Typ @ P
out
= +19 dBM, 14% PAE
Pb-Free Leads
In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Collector Supply
V
CC
5
V
Base Supply First Stage
V
B1
5
V
Base Supply Second Stage
V
B2
5
V
Detector Bias Supply
V
BIAS
5
V
DC Current
I
DC
171
mA
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Ambient
R
θ
JA
185
(1)
°
C/W
Case Operating Temperature Range
T
C
- 40 to +85
°
C
Storage Temperature Range
T
stg
- 55 to +150
°
C
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
2 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°
C
1. Simulated.
Document Number: MMG2401
Rev. 2, 4/2005
Freescale Semiconductor
Technical Data
2400-2500 MHz, 27.5 dB, 26.5 dBm
802.11g WLAN POWER AMPLIFIER
InGaP HBT
MMG2401NR2
CASE 1483-01
QFN 3x3
Freescale Semiconductor, Inc., 2005. All rights reserved.
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