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參數(shù)資料
| 型號(hào)： | MMG3001NT1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| 中文描述： | 異質(zhì)結(jié)雙極晶體管技術(shù)（InGaP HBT寬頻） |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 301K |
| 代理商： | MMG3001NT1 |
MMG3001NT1
1
RF Device Data
Freescale Semiconductor
MMG3001NT1
40-3600 MHz, 20 dB
18.5 dBm
InGaP HBT
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3001NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small-signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 40 to 3600 MHz such as Cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.
Features
Frequency: 40-3600 MHz
P1dB: 18.5 dBm @ 900 MHz
Small-Signal Gain: 20 dB @ 900 MHz
Third Order Output Intercept Point: 32 dBm @ 900 MHz
Single Voltage Supply
Internally Matched to 50 Ohms
Low Cost SOT-89 Surface Mount Package
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
CASE 1514-02, STYLE 1
SOT-89
PLASTIC
123
Table 1. Typical Performance
(1)
Characteristic
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small-Signal Gain
(S21)
G
p
20
18
16
dB
Input Return Loss
(S11)
IRL
-25
-25
-19
dB
Output Return Loss
(S22)
ORL
-22
-18
-17
dB
Power Output @1dB
Compression
P1db
18.5
18
15.5
dBm
Third Order Output
Intercept Point
IP3
32
31
28.5
dBm
1. V
CC
=
5.6 Vdc, T
C
= 25
°
C, 50 ohm system
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
(2)
V
CC
7
V
Supply Current
(2)
I
CC
300
mA
RF Input Power
P
in
10
dBm
Storage Temperature Range
T
stg
-65 to +150
°
C
Junction Temperature
(3)
T
J
150
°
C
2. Voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150
°
C.
Table 3. Thermal Characteristics
(V
CC
= 5.6 Vdc, I
CC
= 58 mA, T
C
= 25
°
C)
Characteristic
Symbol
Value
(4)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
92.0
°
C/W
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MMG3001NT1
Rev. 6, 7/2007
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2004-2007. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMG3001NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| MMG3001NT1_12 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor |
| MMG3002N | 制造商:Freescale Semiconductor 功能描述: |
| MMG3002NT1 | 功能描述:射頻放大器 21DBM 20 DB GEN PURP AMP RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MMG3002NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology (InGaP HBT) |
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