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參數(shù)資料
| 型號： | MMG3004NT1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| 中文描述： | 異質(zhì)結(jié)雙極晶體管技術(shù)（InGaP HBT寬頻） |
| 文件頁數(shù)： | 1/20頁 |
| 文件大小： | 285K |
| 代理商： | MMG3004NT1 |
MMG3004NT1
1
RF Device Data
Freescale Semiconductor
MMG3004NT1
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3004NT1 is a General Purpose Amplifier that is internally
prematched and designed for a broad range of Class A, small-signal, high
linearity, general purpose applications. It is suitable for applications with
frequencies from 400 to 2200 MHz such as Cellular, PCS, WLL, PHS,
VHF, UHF, UMTS and general small-signal RF.
Features
Frequency: 400-2200 MHz
P1dB: 27 dBm @ 2140 MHz
Small-Signal Gain: 16 dB @ 2140 MHz
Third Order Output Intercept Point: 44 dBm @ 2140 MHz
Single 5 Volt Supply
Internally Prematched to 50 Ohms
Pb-Free Leads. RoHS Compliant.
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
400-2200 MHz, 16 dB
27 dBm
InGaP HBT
CASE 1543-02
PQFN 5x5
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Symbol
900
MHz
1960
MHz
2140
MHz
Unit
Small-Signal Gain
(S21)
G
p
19.5
16.5
16
dB
Input Return Loss
(S11)
IRL
-7.5
-8
-8
dB
Output Return Loss
(S22)
ORL
-10
-12
-12
dB
Power Output @1dB
Compression
P1db
27
27
27
dBm
Third Order Output
Intercept Point
IP3
44
44
44
dBm
1. V
DC
= 5 Vdc, T
C
= 25
°
C, 50 ohm system
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
(2)
V
DC
6
V
Supply Current
(2)
I
DC
400
mA
RF Input Power
P
in
18
dBm
Storage Temperature Range
T
stg
-65 to +150
°
C
Junction Temperature
(3)
T
J
150
°
C
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150
°
C.
Table 3. Thermal Characteristics
(V
DC
= 5 Vdc, I
DC
= 250 mA, T
C
= 25
°
C)
Characteristic
Symbol
Value
(4)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
33
°
C/W
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MMG3004NT1
Rev. 0, 11/2005
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2005. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMG3004NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| MMG3005NT1 | 功能描述:射頻放大器 30DBM 15DB GPA 5X5 PQFN RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MMG3005NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| MMG3006NT1 | 功能描述:射頻放大器 33DBM GPA QFN4X4-16 RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MMG3006NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology (InGaP HBT) |
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