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參數(shù)資料
| 型號(hào)： | MMFTN123 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | MMFTN123 |
MMFTN123
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung
ID = 250 A
V(BR)DSS
100 V
Drain-Source leakage current – Drain-Source-Leckstrom
VDS = 100 V
VDS = 20 V
IDSS
1 A
10 nA
Gate-Source leakage current – Gate-Source-Leckstrom
VGS = ± 20 V
IGSS
± 50 nA
Gate-Source threshold voltage – Gate-Source Schwellspannung
VGS = VDS, ID = 1 mA
VGS(th)
0.8 V
2 V
Drain-Source on-state resistance – Drain-Source Einschaltwiderstand
VGS = 10 V, ID = 170 mA
VGS = 4.5 V, ID = 170 mA
RDS(on)
6 Ω
10 Ω
Input Capacitance – Eingangskapazitt
VDS = 25 V, f = 1 MHz
Ciss
73 pF
Output Capacitance – Ausgangskapazitt
VDS = 10 V, f = 1 MHz
Coss
7 pF
Reverse Transfer Capacitance – Rückwirkungskapazitt
VDS = 10 V, f = 1 MHz
Crss
3.4 pF
Turn-On Delay Time – Einschaltverzgerung
VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω
td(on)
3.4 ns
Turn-On Rise Time – Anstiegszeit
VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω
tr
18 ns
Turn-Off Delay Time – Ausschaltverzgerung
VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω
td(off)
31 ns
Turn-Off Fall Time – Abfallzeit
VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω
tf
5 ns
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht – umgebende Luft
RthA
< 500 K/W 1)
1
Device mounted on standard PCB material
Bauteil montiert auf Standard-Leiterplattenmaterial
2
http://www.diotec.com/
Diotec Semiconductor AG
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