參數(shù)資料
型號(hào)： MMDT5551-13
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA SMALL, PLASTIC PACKAGE-6
文件頁數(shù)： 2/3頁
文件大?。?/td> 78K
代理商： MMDT5551-13
DS30172 Rev. 6 - 2
2 of 3
MMDT5551
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
180
V
IC = 100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
160
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
50
nA
mA
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100
°C
Emitter Cutoff Current
IEBO
50
nA
VEB = 4.0V, IC = 0
ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
80
30
250
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.15
0.20
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
1.0
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
6.0
pF
VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
50
250
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = 10V, IC = 10mA,
f = 100MHz
Noise Figure
NF
8.0
dB
VCE = 5.0V, IC = 200
mA,
RS = 1.0k
W, f = 1.0kHz
Ordering Information (Note 5 & 6)
Device
Packaging
Shipping
MMDT5551-7
SOT-363
3000/Tape & Reel
Notes:
4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
6. For Lead Free/RoHS compliant version part number, please add "-F" suffix to the part number above. Example: MMDT5551-7-F.
Marking Information
K4N
YM
K4N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
相關(guān)PDF資料
PDF描述
MMDT5551 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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MMFT1N10ET3 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDT5551-7 功能描述:兩極晶體管 - BJT 160V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT5551-7-F 功能描述:兩極晶體管 - BJT 160V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT5551-T 功能描述:兩極晶體管 - BJT 200mA 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT5551-TP 功能描述:兩極晶體管 - BJT 200mA 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT5P333 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:PNP Silicon Epitaxial Planar Transistor
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