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參數(shù)資料
| 型號： | MMDF3N04HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL TMOS POWER MOSFET 3.4 AMPERES 40 VOLTS |
| 中文描述： | 3400 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 291K |
| 代理商： | MMDF3N04HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0)
(1) (3)
V(BR)DSS
40
—
—
4.3
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc)
(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
—
—
0.015
0.15
2.5
10
μ
Adc
IGSS
—
0.013
500
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0)
(1) (3)
VGS(th)
1.0
—
2.0
4.9
3.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.4 Adc)
(VGS = 4.5 Vdc, ID = 1.7 Adc)
(Cpk
≥
2.0)
(1) (3)
RDS(on)
—
—
55
79
80
100
m
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.7 Adc)
(1)
gFS
2.0
4.5
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
450
900
pF
Output Capacitance
(VDS = 32 Vdc, VGS = 0 Vdc,
—
130
230
Transfer Capacitance
—
32
96
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
VGS = 10 Vdc, RG = 6
) (1)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
9.0
18
ns
Rise Time
(VDD = 20 Vdc, ID = 3.4 Adc,
—
15
30
Turn–Off Delay Time
—
28
56
Fall Time
—
19
38
Turn–On Delay Time
VGS = 4.5 Vdc, RG = 6
) (1)
—
13
26
ns
Rise Time
(VDD = 20 Vdc, ID = 1.7 Adc,
—
77
144
Turn–Off Delay Time
—
17
34
Fall Time
—
20
40
Gate Charge
VGS = 10 Vdc) (1)
—
13.9
28
nC
(VDS = 40 Vdc, ID = 3.4 Adc,
—
2.1
—
—
3.7
—
—
5.4
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 3.4 Adc, VGS = 0 Vdc) (1)
(IS = 3.4 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.87
0.8
1.5
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s) (1)
trr
ta
tb
—
27
—
ns
(IS = 3.4 Adc, VGS = 0 Vdc,
—
20
—
—
7.0
—
Reverse Recovery Storage Charge
QRR
—
0.03
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
Max limit – Typ
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