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參數(shù)資料
| 型號： | MMDF3N04HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL TMOS POWER MOSFET 3.4 AMPERES 40 VOLTS |
| 中文描述： | 3400 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 291K |
| 代理商： | MMDF3N04HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. They are capable of withstanding high energy
in the avalanche and commutation modes and the drain–to–source
diode has a very low reverse recovery time. MiniMOS devices are
designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dc–dc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
Avalanche Energy Specified
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
Value
40
40
±
20
3.4
3.0
40
2.0
16
Unit
Vdc
Vdc
Vdc
Adc
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C (1)
Drain Current
— Continuous @ TA = 70
°
C (1)
Drain Current
— Pulsed Drain Current (4)
Total Power Dissipation @ TA = 25
°
C (1)
Linear Derating Factor (1)
Total Power Dissipation @ TA = 25
°
C (2)
Linear Derating Factor (2)
Apk
Watts
mW/
°
C
Watts
mW/
°
C
°
C
mJ
PD
1.39
11.11
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 4.0 mH, VDS = 40 Vdc)
THERMAL RESISTANCE
Rating
Thermal Resistance — Junction to Ambient, PCB Mount (1)
— Junction to Ambient, PCB Mount (2)
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ 10 Seconds)
(2) When mounted on minimum recommended FR–4 or G–10 board (VGS = 10 V, @ Steady State)
DEVICE MARKING
TJ, Tstg
EAS
– 55 to 150
162
Symbol
R
θ
JA
R
θ
JA
Typ.
—
—
Max.
62.5
90
Unit
°
C/W
ORDERING INFORMATION
D3N04H
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
2500 units
MMDF3N04HDR2
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
HDTMOS, MiniMOS, and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Micro–8 is a registered trademark of International Rectifier. Thermal Clad is a trademark of the Berquist Company.
REV 1
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF3N04HD/D
DUAL TMOS
POWER MOSFET
3.4 AMPERES
40 VOLTS
RDS(on) = 0.080 OHM
Motorola Preferred Device
D
S
G
Source–1
Gate–1
Source–2
Gate–2
1
2
3
4
8
7
6
5
Top View
Drain–1
Drain–1
Drain–2
Drain–2
CASE 751–05, Style 14
SO–8
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| MMDF3N04HDR2 | 功能描述:MOSFET 40V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N04HDR2G | 功能描述:MOSFET NFET SO8D 40V 3.4A 80mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N06HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 60 VOLTS |
| MMDF3N06VL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
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