參數(shù)資料
型號： MMDF3N03HDR2
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： 2.8 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 4/10頁
文件大?。?/td> 281K
代理商： MMDF3N03HDR2
MMDF3N03HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
I DSS
,LEAKAGE
(nA)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.4
0.8
1.2
1.6
2
0
1
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.4
0.5
0.6
0.05
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 5. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = –55°C
25
°C
100
°C
0.3
4
2
0.1
TJ = 25°C
2
4
6
5
1
2
2.5
3
3.5
4
0.2
0.08
0
0.5
1
2.5
3
10
0
5
10
15
30
2.7 V
20
25
0
0.06
0.07
3
2
3
4
5
8
6
7
9
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1.5
2
10 V
VGS = 4.5
TJ = 25°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 1.5 A
125
75
25
– 25
VGS = 0 V
TJ = 125°C
100
°C
0.2
0.6
1.8
1.4
1
5
6
2.5 V
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
4.5 V
4.3 V
3.9 V
4.1 V
VGS = 10 V
ID = 1.5 A
TJ = 25°C
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