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參數(shù)資料
| 型號(hào)： | MMDF3N03HDR2 |
| 廠(chǎng)商： | MOTOROLA INC |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 2.8 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 281K |
| 代理商： | MMDF3N03HDR2 |
MMDF3N03HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
—
34.5
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.7
3.0
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
—
0.06
0.065
0.07
0.075
Ohms
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
gFS
2.0
3.6
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
450
630
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
160
225
Transfer Capacitance
f = 1.0 MHz)
Crss
—
35
70
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
RG = 9.1 )
td(on)
—
12
24
ns
Rise Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
RG = 9.1 )
tr
—
65
130
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 9.1 )
td(off)
—
16
32
Fall Time
G = 9.1 )
tf
—
19
38
Turn–On Delay Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 9.1 )
td(on)
—
8
16
ns
Rise Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 9.1 )
tr
—
15
30
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
30
60
Fall Time
G = 9.1 )
tf
—
23
46
Gate Charge
(VDS = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
QT
—
11.5
16
nC
(VDS = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
Q1
—
1.5
—
(VDS = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
Q2
—
3.5
—
Q3
—
2.8
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.82
0.7
1.2
—
Vdc
Reverse Recovery Time
See Figure 12
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
trr
—
24
—
ns
See Figure 12
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
—
17
—
dIS/dt = 100 A/s)
tb
—
7
—
Reverse Recovery Storage Charge
QRR
—
0.025
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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