參數(shù)資料
型號： MMDF2P02ER2
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： 2 A, 20 V, 0.4 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 4/10頁
文件大?。?/td> 274K
代理商： MMDF2P02ER2
MMDF2P02E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
3.5 V
10 V
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.4
0.8
1.2
1.6
2
0
2
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
3
4
5
10
0.3
0.4
0.6
0.1
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
1
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.2
6
8
– 50
0
50
100
150
4
1
0
3.3 V
TJ = 25°C
VGS = 10
2
3
4
1
2.5
3
3.5
4
4.5
0.1
0.4
0.5
0.6
0.3
0.2
0
0.5
1
1.5
2
0
I DSS
,LEAKAGE
(nA)
100
10
0
4
8
12
20
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 2 A
125
75
25
– 25
VDS ≥ 10 V
25
°C
100
°C
TJ = –55°C
VGS = 4.5
TJ = 25°C
9
7
0.5
ID = 1 A
TJ = 25°C
16
3.7 V
3.9 V
4.1 V
4.3 V
4.5 V
5 V
4.7 V
7 V
VGS = 0 V
TJ = 125°C
100
°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDF2P02ER2G 功能描述:MOSFET PFET 25V 2.5A 250MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF2P02ER2G-ND 制造商:ON Semiconductor 功能描述:
MMDF2P02HD 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual
MMDF2P02HDR2 功能描述:MOSFET 20V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF2P02HDR2G 功能描述:MOSFET PFET SO8D 20V 3.3A 160mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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