參數(shù)資料
型號： MMDF2P02ER2
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： 2 A, 20 V, 0.4 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 3/10頁
文件大?。?/td> 274K
代理商： MMDF2P02ER2
MMDF2P02E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
25
—
2.2
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
1.0
–
2.0
3.8
3.0
–
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
—
0.19
0.3
0.25
0.4
Ohm
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
1.0
2.8
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
340
475
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
220
300
Transfer Capacitance
f = 1.0 MHz)
Crss
—
75
150
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 5.0 Vdc,
RG = 6.0 )
td(on)
—
20
40
ns
Rise Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 5.0 Vdc,
RG = 6.0 )
tr
—
40
80
Turn–Off Delay Time
VGS = 5.0 Vdc,
RG = 6.0 )
td(off)
—
53
106
Fall Time
G = 6.0 )
tf
—
41
82
Turn–On Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 )
td(on)
—
13
26
Rise Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 )
tr
—
29
58
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 )
td(off)
—
30
60
Fall Time
G = 6.0 )
tf
—
28
56
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
QT
—
10
15
nC
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q1
—
1.0
—
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q2
—
3.5
—
Q3
—
3.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(2)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
—
1.5
2.0
Vdc
Reverse Recovery Time
See Figure 11
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
trr
—
32
64
ns
See Figure 11
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
—
19
—
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
—
12
—
Reverse Recovery Storage Charge
QRR
—
0.035
—
C
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.
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相關代理商/技術參數(shù)
參數(shù)描述
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