參數資料
型號： MMBTH24-13
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-3
文件頁數： 1/3頁
文件大小： 73K
代理商： MMBTH24-13
DS31034 Rev. 9 - 2
1 of 3
MMBTH24
www.diodes.com
Diodes Incorporated
MMBTH24
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Designed for VHF/UHF Amplifier Applications and High
Output VHF Oscillators
High Current Gain Bandwidth Product
Ideal for Mixer and RF Amplifier Applications with collector
currents in the 100
mA - 30 mA Range
Available in Lead Free/RoHS Compliant Version (Note 3)
Characteristic
Symbol
MMBTH24
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
4.0
V
Collector Current - Continuous (Note 1)
IC
50
mA
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
417
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
C
B
E
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
Marking (See Page 2): K3Z
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 1mA, IB = 0
Collector-Base Breakdown Voltage
V(BR)CBO
40
V
IC = 100
mA, IE = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
4.0
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
100
nA
VCB = 30V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 2V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
30
IC = 8mA, VCE = 10.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.5
V
IC = 4mA, IB = 400
mA
Base-Emitter On Voltage
VBE(SAT)
0.95
V
IC = 4mA, VCE = 10.0V
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
400
MHz
VCE = 10V, f = 100MHz, IC = 8mA
Collector-Base Capacitance
CCB
0.7
pF
VCB = 10V, f = 1.0MHz, IE = 0
Collector-Base Feedback Capacitiance
CRB
0.65
pF
VCB = 10V, f = 1.0MHz, IE = 0
Collector-Base Time Constant
Rb’Cc
9ps
IC = 4mA VCB = 10V, f =31.8MHz
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
E
B
C
Features
SPICE MODEL: MMBTH24
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相關代理商/技術參數
參數描述
MMBTH24-7 功能描述:兩極晶體管 - BJT 40V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTH24-7-F 功能描述:兩極晶體管 - BJT 40V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTH34 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
MMBTH34_Q 功能描述:兩極晶體管 - BJT NPN RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTH81 功能描述:射頻雙極小信號晶體管 PNP RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
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