參數(shù)資料
型號： MMBT4401
廠商： LITE-ON SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, PLASTIC PACKAGE-3
文件頁數(shù)： 1/4頁
文件大小： 234K
代理商： MMBT4401
MMBT4401
NPN General Purpose Transistor
FEATURES
For switching and amplifier applications.
Complementary PNP Type Available (MMBT4403)
MECHANICAL DATA
Case: SOT-23 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current -Continuous
IC
600
mA
Collector Power Dissipation
PC
300
mW
Thermal Resistance, Junction to Ambient
RΘJA
357
/W
℃
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=100A,IE=0
VCBO
60
V
Collector-emitter breakdown voltage
IC=1mA,IB=0
VCEO
40
V
Emitter-base breakdown voltage
IE=100A,IC=0
VEBO
6
V
Collector-base cut-off current
VCB=50V,IE=0
ICBO
0.1
uA
Collector-emitter cut-off current
VCE=30V,IB=0
ICEO
0.1
uA
Emitter-base cut-off current
VEB=5V,IC=0
IEBO
0.1
uA
DC current gain
VCE=1V,IC=150mA
hFE
100
300
V
Collector-emitter saturation voltage
IC=150mA,IB=15mA
VCE(sat)
0.4
V
Base-emitter saturation voltage
IC=150mA,IB=15mA
VBE(sat)
0.95
V
Transition frequency
VCE=10V,IC=20mA,
f=200MHz
fT
250
MHz
REV. 1, Nov-2010, KSNR12
相關(guān)PDF資料
PDF描述
MMBT4403/E9 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT4403 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT4403-GS18 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MMBT4403-GS08 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MMBT4403L-AE3-R 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT4401_D87Z 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4401_Q 功能描述:兩極晶體管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4401-13 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 10K - Tape and Reel
MMBT4401-13-02-F 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 3K - Tape and Reel
MMBT4401-13-03-F 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 3K - Tape and Reel
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