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參數(shù)資料
| 型號： | MMBT4401 |
| 廠商： | RECTRON LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 351K |
| 代理商： | MMBT4401 |
FEATURES
*
Power dissipation
PCM:
0.3 W(Tamb=25
OC)
Collector current
ICM:
0.6 A
Collector-base voltage
V(BR)CBO: 60 V
Operating and storage junction temperature range
TJ,Tstg: -55OC to+150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
MMBT4401
2007-5
ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted)
MAXIMUM RATINGES ( @ TA = 25OC unless otherwise noted)
Notes :
CHARACTERISTICS
SYMBOL
UNITS
417
oC/W
Thermal Resistance Junction to Ambient
RATINGS
Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25
OC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
PD
TJ
TSTG
R qJA
VALUE
MAX.
-
TYP.
-
MIN.
UNITS
mW
300
1. Alumina=0.4*0.3*0.024in.99.5% alumina
2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".
150
-55 to +150
oC
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
Dimensions in inches and (millimeters)
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
1
3
BASE
EMITTER
COLLECTOR
2
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.047(1.20)
0.055(1.40)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT4401_D87Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4401_Q | 功能描述:兩極晶體管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4401-13 | 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 10K - Tape and Reel |
| MMBT4401-13-02-F | 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 3K - Tape and Reel |
| MMBT4401-13-03-F | 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 3K - Tape and Reel |
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