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參數(shù)資料
| 型號： | MMBT3906L99Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MMBT3906L99Z |
2N3906
/
MMBT3906
/
PZT3906
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N3906
*PZT3906
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
125
°C/W
Symbol
Characteristic
Max
Units
**MMBT3906
MMPQ3906
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
1,000
8.0
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
357
125
240
°C/W
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Base Emitter ON Voltage vs
Collector Current
P66
0.1
1
10
25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
BA
S
E
EMIT
TER
ON
VOL
T
A
GE
(V)
C
B
EON
V
= 1V
CE
25 °C
- 40 C
125 C
Typical Pulsed Current Gain
vs Collector Current
0.1 0.2
0.5
1
2
5
10
20
50 100
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
h
-
T
Y
P
ICA
L
PUL
S
E
D
CURRE
NT
GA
IN
C
FE
125 °C
25 °C
- 40 °C
Vce = 1V
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Base-Emitter Saturation
Voltage vs Collector Current
P66
1
10
100
200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE
EM
IT
T
E
R
VO
L
T
A
G
E
(
V
)
C
B
ESA
T
β = 10
25 °C
- 40 C
125 C
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
200
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V
-
COLLE
CT
OR
EMI
TTER
VO
L
T
A
GE
(V)
C
CE
S
A
T
25 °C
- 40 C
125 C
β = 10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3906L-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:GENERAL PURPOSE APPLIATION |
| MMBT3906L-AL3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:GENERAL PURPOSE APPLIATION |
| MMBT3906LP | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT3906LP-7 | 功能描述:兩極晶體管 - BJT BIPOLAR TRANS PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906LP-7B | 功能描述:兩極晶體管 - BJT General Purpose Tran X1-DFN1006-3,10K RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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