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參數(shù)資料
| 型號： | MMBT3904 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | MMBT3904 |
THERMAL DATA
Rthj-amb
Thermal Resistance Junction-Ambient
Max
357.1
oC/W
Device mounted on a PCB area of 1 cm2
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEX
Collector Cut-off
Current (VBE = -3 V)
VCE = 30 V
50
nA
IBEX
Base Cut-off Current
(VBE = -3 V)
VCE = 30 V
50
nA
V(BR)CEO
Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 1 mA
40
V
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 10
A
60
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10
A
6V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 10 mA
IB = 1 mA
IC = 50 mA
IB = 5 mA
0.2
V
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 10 mA
IB = 1 mA
IC = 50 mA
IB = 5 mA
0.65
0.85
0.95
V
hFE
DC Current Gain
IC = 0.1 mA
VCE = 1 V
IC = 1 mA
VCE = 1 V
IC = 10 mA
VCE = 1 V
IC = 50 mA
VCE = 1 V
IC = 100 mA
VCE = 1 V
60
80
100
60
30
300
fT
Transition Frequency
IC = 10 mA VCE = 20 V f = 100 MHz
250
270
MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 1 MHz
4
pF
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V
f = 1MHz
18
pF
NF
Noise Figure
VCE = 5 V
IC = 0.1 mA
f = 10 Hz
to 15.7 KHz
RG = 1 K
5dB
td
tr
Delay Time
Rise Time
IC = 10 mA
IB = 1 mA
VCC = 30 V
35
ns
ts
tf
Storage Time
Fall Time
IC = 10 mA
IB1 = -IB2 = 1 mA
VCC = 30 V
200
50
ns
Pulsed: Pulse duration = 300 s, duty cycle ≤ 2 %
MMBT3904
2/4
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