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參數(shù)資料
| 型號： | MMBT2907LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 18/24頁 |
| 文件大?。?/td> | 388K |
| 代理商： | MMBT2907LT1 |
MMBT2907LT1 MMBT2907ALT1
2–321
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
3.0
0.2
–0.1
TJ = 125°C
25
°C
–55
°C
VCE = –1.0 V
VCE = –10 V
h
FE
,NORMALIZED
CURRENT
GAIN
2.0
–0.2
–0.3
–0.5 –0.7
–1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50 –70
–100
–200
–300
–500
Figure 4. Collector Saturation Region
IB, BASE CURRENT (mA)
–0.4
–0.6
–0.8
–1.0
–0.2
V
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
0
CE
IC = –1.0 mA
–0.005
–10 mA
–0.01
–100 mA
–500 mA
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0 –10
–20
–30
–50
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT
300
–5.0
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (mA)
–5.0
t,TIME
(ns)
t,TIME
(ns)
200
100
70
50
30
20
10
7.0
5.0
3.0
–7.0 –10
–20 –30
–50 –70 –100
–200 –300
–500
tr
2.0 V
td @ VBE(off) = 0 V
VCC = –30 V
IC/IB = 10
TJ = 25°C
500
300
100
70
50
30
20
10
7.0
5.0
–7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
200
tf
t
′s = ts – 1/8 tf
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2907LT1 WAF | 制造商:ON Semiconductor 功能描述: |
| MMBT2907LTI | 制造商:ON Semiconductor 功能描述: |
| MMBT2907Q | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT2907W | 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:PNP Silicon Epitaxial Planar Medium Power Transistor |
| MMBT3404 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:SOT-23 Plastic-Encapsulate Transistors |
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