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2–319
Motorola Small–Signal Transistors, FETs and Diodes Device Data
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
2907
2907A
Unit
Collector – Emitter Voltage
VCEO
–40
–60
Vdc
Collector – Base Voltage
VCBO
–60
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
DEVICE MARKING
MMBT2907LT1 = M2B; MMBT2907ALT1 = 2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –10 mAdc, IB = 0)
MMBT2907
MMBT2907A
V(BR)CEO
–40
–60
—
Vdc
Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0)
V(BR)CBO
–60
—
Vdc
Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc)
ICEX
—
–50
nAdc
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
MMBT2907
MMBT2907A
(VCB = –50 Vdc, IE = 0, TA = 125°C)
MMBT2907
MMBT2907A
ICBO
—
–0.020
–0.010
–20
–10
Adc
Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
IB
—
–50
nAdc
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBT2907LT1
MMBT2907ALT1
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
*Motorola Preferred Device
*
COLLECTOR
3
1
BASE
2
EMITTER