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參數(shù)資料
| 型號： | MMBT2907ALT1 |
| 廠商： | RECTRON LTD |
| 元件分類： | 小信號晶體管 |
| 中文描述： | PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 796K |
| 代理商： | MMBT2907ALT1 |
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage(2) (IC= -1.0 mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= -0.1mAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= -0.1mAdc, IC= 0)
Collector Cutoff Current (VCE= -35Vdc, VBE(off)= -0.4Vdc)
DC Current Gain (IC= -0.1mAdc, VCE= -1.0Vdc)
(IC= -10mAdc, VCE= -1.0Vdc)
(IC= -1.0mAdc, VCE= -1.0Vdc)
V(BR)CEO
-40
-
Vdc
V(BR)CBO
-40
-
Vdc
V(BR)EBO
-5.0
-
Vdc
ICEX
-
-0.1
Adc
Base Current (VCE= -35Vdc, VEB(off)= -0.4Vdc)
IB
-
-0.1
Adc
hFE
30
-
60
-
100
-
100
300
Symbol
Min
Max
Unit
(IC= -150mAdc, VCE= -2.0Vdc)(2)
Collector-Emitter Saturation Voltage (2) (IC= -150mAdc, IB= -15mAdc)
(IC= -500mAdc, IB= -50mAdc)
(IC= -500mAdc, VCE= -2.0Vdc)(2)
Vdc
VCE(sat)
20
-
-0.4
-
-0.75
Vdc
VBE(sat)
-0.75
-0.95
-
-1.3
Base-Emitter Saturation Voltage (2) (IC= -150mAdc, IB= -15mAdc)
(IC= -500mAdc, IB= -50mAdc)
RECTRON
NOTES : 2. Pulse Test: Pulse Width<300
s,Duty Cycle<2.0%
3. fT is defined as the frequency at which |hfe| extrapolates to unity
-
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
fT
250
-
MHz
Current-Gain-Bandwidth Product (IC= -20mAdc, VCE= -10Vdc, f= 100MHz)
Ccb
Ceb
-
4.5
pF
td
tr
ts
tf
-
ns
hie
-
10
2.0
12
k
hre
0.1
10
100
400
X 10-4
hfe
3.0
60
-
hoe
225
30
15
20
mhos
Output Capacitance (VCB= -10Vdc, IE= 0, f= 1.0MHz)
Input Capacitance (VEB= -0.5Vdc, IC= 0, f= 1.0MHz)
Voltage Feedback Ratio (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
Output Admittance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
(VCC= -30Vdc, VBE= -2.0Vdc, IC= -150mAdc, IB1= -15mAdc)
(VCC= -30Vdc, IC= -150mAdc, IB1= IB2= -15mAdc)
Input lmpedance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
Small-Signal Current Gain (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
Delay Time
Rise Time
Storage Time
Fall Time
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PDF描述 |
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| MMBT2907A | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT2907LT1 | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT3904-T1 | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT3904LT1 | |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2907ALT1G | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2907ALT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MMBT2907ALT1HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 60V 0.6A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR SWITCHING PNP SOT-23 |
| MMBT2907ALT1XT | 制造商:Infineon Technologies AG 功能描述:AF TRANS,SOT 23, 3K T&R WITH MMBT LABEL |
| MMBT2907ALT3 | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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