參數(shù)資料
型號(hào): MMBT3904LT1
廠商: RECTRON LTD
元件分類: 小信號(hào)晶體管
中文描述: 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 823K
代理商: MMBT3904LT1
RECTRON
SEMICONDUCTOR
FEATURES
*
Power dissipation
PCM
0.2 W(Tamb=25
OC)
Collector current
ICM
0.2
A
Collector-base voltage
V(BR)CBO: 60 V
Operating and storage junction temperature range
TJ,Tstg: -55
OCto+150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
MMBT3904LT1
Dimensions in inches and (millimeters)
2006-3
ELECTRICAL CHARACTERISTICS ( At TA = 25
oC unless otherwise noted )
NOTES :
Max. Instantaneous Forward Voltage at IF= 10mA
CHARACTERISTICS
SYMBOL
UNITS
417
-
Volts
oC/W
Thermal Resistance Junction to Ambient
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation (1) @TA=25
oC Derate above 25OC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
-
PD
TJ
TSTG
R
θJA
VF
VALUE
MAX.
-
TYP.
-
MIN.
UNITS
-
mW
-
300
1.Alumina=0.4*0.3*0.024in.99.5% alumina
-55 to +150
oC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
oC ambient temperature unless otherwise specified.
0.118(3.000)
0.012(0.30)
0.020(0.50)
0.003(0.080)
0.006(0.150)
0.110(2.800)
0.019(2.00)
0.071(1.80)
0.100(2.550)
0.089(2.250)
0.020(0.500)
0.012(0.300)
0.043(1.100)
0.035(0.900)
0.004(0.100)
0.000(0.000)
0.037(0.950)TYP
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
相關(guān)PDF資料
PDF描述
MMBT3904T 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT3904 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
MMBT3906-T1 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MMBT3906LT1-TP 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MMBT3906LT1 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT3904LT1G 功能描述:兩極晶體管 - BJT NPN GENERAL PURPOSE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT3904LT1G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
MMBT3904LT1H 制造商:ON Semiconductor 功能描述:SS SOT23 GP XSTR NPN PBFR
MMBT3904LT1HTSA1 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Cut TR (SOS) 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR HI-VOLT NPN SOT-23
MMBT3904LT1S 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-23