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參數(shù)資料
| 型號： | MMBT3904LT1 |
| 廠商： | RECTRON LTD |
| 元件分類： | 小信號晶體管 |
| 中文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 823K |
| 代理商： | MMBT3904LT1 |
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS(2)
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (IC= 1mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= 10Adc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 100Adc, IC= 0)
Base Cutoff Current (VCE= 30Vdc, VEB= 3.0Vdc)
Collector Cutoff Current (VCE= 30Vdc, VEB= 3.0Vdc)
DC Current Gain (IC= 0.1mAdc, VCE= 1.0Vdc)
Collector-Emitter Saturation Voltage (IC= 10mAdc, IB= 1.0mAdc)
(IC= 1.0mAdc, VCE= 1.0Vdc)
(IC= 10mAdc, VCE= 1.0Vdc)
(IC= 50mAdc, VCE= 1.0Vdc)
(IC= 100mAdc, VCE= 1.0Vdc)
V(BR)CEO
40
-
Vdc
V(BR)CBO
60
-
Vdc
V(BR)EBO
6.0
-
Vdc
IBL
ICEX
-
50
-
50
nAdc
Vdc
fT
300
-
MHz
hFE
60
300
-
30
70
100
40
-
VCE(sat)
-
0.2
-
0.3
Symbol
Min
Max
Unit
(IC= 50mAdc, IB= 5.0mAdc)
Base-Emitter Saturation Voltage (IC= 10mAdc, IB= 1.0mAdc)
Current-Gain-Bandwidth Product (IC= 10mAdc, VCE= 20Vdc, f= 100MHz)
Cobo
Cibo
-
4.0
pF
td
tr
ts
tf
NF
-
ns
dB
ns
hie
-
8.0
1.0
10
kohms
hre
0.5
8.0
100
400
X 10-4
hfe
1.0
40
-
5.0
-
hoe
200
50
35
mhos
Output Capacitance (VCB= 5.0Vdc, IE= 0, f= 1.0MHz)
Input Capacitance (VEB= 0.5Vdc, IC= 0, f= 1.0MHz)
Voltage Feedback Ratio (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
Output Admittance (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
(VCC= 3.0Vdc, VBE= -0.5Vdc, IC= 10mAdc, IB1= 1.0mAdc)
(VCC= 3.0Vdc, IC= 10mAdc, IB1= IB2= 1.0mAdc)
Input lmpedance (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
Small-Signal Current Gain (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
Noise Figure (VCE= 5.0Vdc, IC= 100Adc, RS= 1.0kohms, f= 1.0kHz)
Vdc
VBE(sat)
0.65
0.85
-
0.95
(IC= 50mAdc, IB= 5.0mAdc)
Delay Time
Rise Time
Storage Time
Fall Time
RECTRON
NOTES : 2. Pulse Test: Pulse Width<300
s,Duty Cycle<2.0%
-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3904LT1G | 功能描述:兩極晶體管 - BJT NPN GENERAL PURPOSE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3904LT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MMBT3904LT1H | 制造商:ON Semiconductor 功能描述:SS SOT23 GP XSTR NPN PBFR |
| MMBT3904LT1HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Cut TR (SOS) 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR HI-VOLT NPN SOT-23 |
| MMBT3904LT1S | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-23 |
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