參數(shù)資料
型號： MMBT2222LT1
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： General Purpose Transistors NPN Silicon(NPN型通用晶體管)
中文描述： 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： CASE 318-08, TO-236, 3 PIN
文件頁數(shù)： 2/7頁
文件大小： 104K
代理商： MMBT2222LT1
MMBT2222LT1, MMBT2222ALT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0)
MMBT2222A
MMBT2222
V
(BR)CEO
30
40
-
-
Vdc
Collector-Base Breakdown Voltage (I
C
= 10 Adc, I
E
= 0)
MMBT2222A
MMBT2222
V
(BR)CBO
60
75
-
-
Vdc
Emitter-Base Breakdown Voltage (I
E
= 10 Adc, I
C
= 0)
MMBT2222A
MMBT2222
V
(BR)EBO
5.0
6.0
-
-
Vdc
Collector Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
MMBT2222A
I
CEX
-
10
nAdc
Collector Cutoff Current (V
CB
= 50 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125
°
C)
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 125
°
C)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
I
CBO
-
-
-
-
0.01
0.01
10
10
Adc
Emitter Cutoff Current (V
EB
= 3.0 Vdc, I
C
= 0)
MMBT2222A
I
EBO
-
100
nAdc
Base Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
MMBT2222A
I
BL
-
20
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
= -55
°
C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 4)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (Note 4)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 4)
MMBT2222A only
MMBT2222
MMBT2222A
h
FE
35
50
75
35
100
50
30
40
-
-
-
-
300
-
-
-
-
Collector-Emitter Saturation Voltage (Note 4)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
MMBT2222
MMBT2222A
(I
C
= 500 mAdc, I
B
= 50 mAdc)
MMBT2222
MMBT2222A
V
CE(sat)
-
-
-
-
0.4
0.3
1.6
1.0
Vdc
Base-Emitter Saturation Voltage (Note 4)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
MMBT2222
MMBT2222A
(I
C
= 500 mAdc, I
B
= 50 mAdc)
MMBT2222
MMBT2222A
V
BE(sat)
-
0.6
-
-
1.3
1.2
2.6
2.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product (Note 5)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
MMBT2222
MMBT2222A
f
T
250
300
-
-
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
-
8.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
MMBT2222
MMBT2222A
C
ibo
-
-
30
25
pF
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
h
ie
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
h
re
-
-
8.0
4.0
X 10
-4
Small-Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
h
fe
50
75
300
375
-
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
h
oe
5.0
25
35
200
mhos
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MMBT2222LT1G 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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