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參數(shù)資料
| 型號(hào)： | MMBT2222LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Transistors NPN Silicon(NPN型通用晶體管) |
| 中文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | MMBT2222LT1 |
Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 7
1
Publication Order Number:
MMBT2222LT1/D
MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1 is a Preferred Device
General Purpose Transistors
NPN Silicon
Features
Pb-Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
MMBT2222LT1
MMBT2222ALT1
V
CEO
30
40
Vdc
Collector-Base Voltage
MMBT2222LT1
MMBT2222ALT1
V
CBO
60
75
Vdc
Emitter-Base Voltage
MMBT2222LT1
MMBT2222ALT1
V
EBO
5.0
6.0
Vdc
Collector Current - Continuous
I
C
600
mAdc
Collector Current - Peak (Note 3)
I
CM
1100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
(Note 1) T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction-to-Ambient
R
JA
556
°
C/W
Total Device Dissipation Alumina
Substrate (Note 2) T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction-to-Ambient
R
JA
417
°
C/W
Junction and Storage Temperature Range
T
J
, T
stg
-55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR-5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Reference SOA curve.
SOT-23
CASE 318
STYLE 6
Preferred
devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
xxx = 1P or M1B
M
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
1
2
1
3
xxxM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222LT1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1_01 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1_06 | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1G | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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