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參數(shù)資料
| 型號： | MMBT2222ARF |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 208K |
| 代理商： | MMBT2222ARF |
MMBT2222A
300mW, NPN Small Signal Transistor
Small Signal Transistor
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Min
Max
Min
Max
Case : SOT- 23 small outline plastic package
2.80
3.00
0.110
0.118
1.20
1.40
0.047
0.055
0.30
0.50
0.012
0.020
1.80
2.00
0.071
0.079
2.25
2.55
0.089
0.100
0.90
1.20
0.035
0.043
Package
Packing
Marking
SOT-23
3K / 7" Reel
1P
SOT-23
3K / 7" Reel
1P
Maximum Ratings
Notes:1. Valid provided that electrodes are kept at ambient temperature
SOT-23
Weight : 0.008gram (approximately)
Maximum Ratings and Electrical Characteristics
C
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
mW
6
300
V
40
Collector-Base Voltage
Collector-Emitter Voltage
75
VCBO
VCEO
Power Dissipation
PD
Type Number
Symbol
Unit (inch)
Dimensions
B
Unit (mm)
Features
Mechanical Data
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
A
Epitaxial planar die construction
VEBO
D
E
G
Rating at 25°C ambient temperature unless otherwise specified.
Marking Code : 1P
0.022 REF
0.550 REF
High temperature soldering guaranteed: 260°C/10s
Units
Junction and Storage Temperature Range
Thermal Resistance (Junction to Ambient) (Note 1)
RθJA
TJ, TSTG
Collector Current
Value
Suggested PAD Layout
IC
Ordering Information
Part No.
MMBT2222A RF
MMBT2222A RFG
Emitter-Base Voltage
°C
600
417
-55 to + 150
mA
°C/W
B
A
C
D
F
E
G
2 Emitter
3 Collector
1 Base
2.0
0.079
0.95
0.037
0.9
0.035
0.8
0.031
Version : A10
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PDF描述 |
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| MMBT2222ARFG | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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| MMBT2222AT/R13 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT2222A | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222ARFG | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:300mW, NPN Small Signal Transistor |
| MMBT2222AT | 功能描述:兩極晶體管 - BJT NPN GENERAL PURPOSE AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222A-T | 功能描述:兩極晶體管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222AT_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT2222AT_10 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Plastic-Encapsulate Transistors NPN Silicon |
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