參數(shù)資料
型號(hào)： MMBT2222AG-AN3-R
廠商： UNISONIC TECHNOLOGIES CO LTD
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： HALOGEN FREE PACKAGE-3
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 0K
代理商： MMBT2222AG-AN3-R
MMBT2222A
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R206-019,G
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
SOT-23
350
SOT-323
200
Collector Dissipation
SOT-523
PC
150
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-23
357
SOT-323
625
Junction to Ambient
SOT-523
θJA
833
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
IC=10μA, IE=0
75
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA, IB=0
40
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10μA, IC =0
6
V
VCB=60V, IE=0
0.01
A
Collector Cutoff Current
ICBO
VCB=60V, IE=0, Ta=150°C
10
A
Emitter Cutoff Current
IEBO
VEB=3.0V, IC=0
10
nA
Base Cutoff Current
IBL
VCE=60V, VEB(OFF)=3.0V
20
nA
Collector Cutoff Current
ICEO
VCE=60V, VEB(OFF)=3.0V
10
nA
ON CHARACTERISTICS
IC =0.1mA, VCE=10V
35
IC =1.0mA, VCE=10V
50
IC =10mA, VCE=10V
75
IC =10mA, VCE=10V, Ta= -55°C
35
IC =150mA, VCE=10V(Note)
100
300
IC =150mA, VCE=1.0V(Note)
50
DC Current Gain
hFE
IC =500mA, VCE=10V(Note)
40
IC =150mA, IB=15mA
0.3
V
Collector-Emitter Saturation
Voltage(Note)
VCE(SAT)
IC =500mA, IB=50mA
1.0
V
IC =150mA, IB=15mA
0.6
1.2
V
Base-Emitter Saturation
Voltage(Note)
VBE(SAT)
IC =500mA, IB=50mA
2.0
V
SMALL SIGNAL CHARACTERISTICS
Real Part of Common-Emitter High
Frequency Input Impedance
Re(hje)
IC=20mA, VCB=20V, f=300MHz
60
Transition Frequency
fT
IC =20mA, VCE=20V, f=100MHz
300
MHz
Output Capacitance
Cobo
VCB=10V, IE=0, f=100kHz
8.0
pF
Input Capacitance
Cibo
VEB=0.5V, IC=0, f=100kHz
25
pF
Collector Base Time Constant
rb'Cc
IC=20mA, VCB=20V, f=31.8MHz
150
pS
Noise Figure
NF
IC=100μA, VCE=10V, Rs=1.0k
f=1.0kHz
4.0
dB
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