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參數(shù)資料
| 型號(hào)： | MMBT2222AD87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/17頁 |
| 文件大小： | 898K |
| 代理商： | MMBT2222AD87Z |
NPN General Purpose Amplifier
This device is for use as a medium power amplifier and
switch requiring collector currents up to 500 mA. Sourced
from Process 19.
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
75
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
1.0
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
1998 Fairchild Semiconductor Corporation
Thermal Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN2222A
*MMBT2222A
**PZT2222A
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
PN2222A
C
B
E
TO-92
MMBT2222A
C
B
E
SOT-23
Mark: 1P
PZT2222A
B
C
SOT-223
E
PN2222A
/
MMBT2222A
/
PZT2222A
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