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參數(shù)資料
| 型號(hào)： | MMBT2222A-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 100K |
| 代理商： | MMBT2222A-GS18 |
VISHAY
MMBT2222A
Document Number 85123
Rev. 1.2, 31-Aug-04
Vishay Semiconductors
www.vishay.com
3
Input impedance
VCE = 10 V, IC = 1 mA,
f = 1 kHz
hie
28.0
k
VCE = 10 V, IC = 10 mA,
f = 1 kHz
hie
0.25
1.25
k
Small signal current gain
VCE = 10 V, IC = 1 mA,
f = 1 kHz
hfe
50
300
VCE = 10 V, IC = 10 mA,
f = 1 kHz
hfe
75
375
Voltage feedback ratio
VCE = 10 V, IC = 1 mA
hre
50
300
f = 1 kHz
hre
75
375
Output admittance
VCE = 10 V, IC = 1 mA,
f = 1 kHz
hoe
5.0
35
S
VCE = 10 V, IC = 10 mA,
f = 1 kHz
hoe
25
200
S
Collector base time constant
IE = 20 mA, VCB = 20 V,
f = 31.8 MHz
rb‘CCC
150
ps
Delay time (see fig.1)
IB1 = 15 mA, IC = 150 mA,
VCC = 30 V, VBE = - 0.5 V
td
10
ns
Rise time (see fig.1)
IB1 = 15 mA, IC = 150 mA,
VCC = 30 V, VBE = - 0.5 V
tr
25
ns
Storage time (see fig.2)
IB1 = IB2 = 15 mA,
IC = 150 mA, VCC = 30 V
ts
225
ns
Fall time (see fig.2)
IB1 = IB2 = 15 mA, IC = 150 mA,
VCC = 30 V
ts
60
ns
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Figure 1. Turn-On Time
<2ns
0
≈
+16V
-2V
1to100
s, DUTY CYCLE 2 %
1k
200
+30V
<10pF
C *)
S
Scope rise time<4ns
Total shunt capacitance of test jig,
connectors and oscilloscope
18564
*)
Figure 2. Turn-Off Time
0
+16V
-14V
1k
200
+30V
<10pF
C *)
S
18565
Total shunt capacitance of test jig,
connectors and oscilloscope
*)
≈
1to100
s, DUTY CYCLE 2 %
<20ns
-4V
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