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參數(shù)資料
| 型號： | MMBT2222A-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 100K |
| 代理商： | MMBT2222A-GS18 |
www.vishay.com
2
Document Number 85123
Rev. 1.2, 31-Aug-04
VISHAY
MMBT2222A
Vishay Semiconductors
Maximum Thermal Resistance
Electrical DC Characteristics
1) Pulse Test: Pulse width ≤ 300 s - Duty cycle ≤ 2 %
Electrical AC Characteristics
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
FR-5 board
RthJA
556
K/W
Alumina substrate
RthJA
417
K/W
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 55 to + 150
°C
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
DC current gain
VCE = 10 V, IC = 0.1 mA
hFE
35
VCE = 10 V, IC = 1 mA
hFE
50
VCE = 10 V, IC = 10 mA
hFE
75
VCE = 10 V, IC = 10 mA,
TA = - 55 °C
hFE
35
VCE = 10 V, IC = 150 mA
1)
hFE
100
300
VCE = 10 V, IC = 500 mA
1)
hFE
40
VCE = 1.0 V, IC = 150 mA
1)
hFE
50
Collector - base breakdown
voltage
IC = 10 A, IE = 0
V(BR)CBO
75
V
Collector - emitter breakdown
voltage1)
IC = 10 A, IB = 0
V(BR)CEO
40
V
Emitter - base breakdown
voltage
IE = 10 A, IC = 0
V(BR)EBO
6.0
V
Collector - emiter saturation
voltage1)
IC = 150 mA, IB = 15 mA
VCEsat
0.3
V
IC = 500 mA, IB = 50 mA
VCEsat
1.0
V
Base - emitter saturation voltage IC = 150 mA, IB = 15 mA
VBEsat
0.6
1.2
V
IC = 500 mA, IB = 50 mA
VBEsat
2.0
V
Collector-emitter cut-off current
VEB = 3 V, VCE = 60 V
ICEX
10
nA
Collector-base cut-off current
VCB = 60 V, IE = 0
ICBO
10
nA
VCB = 50 V, IE = 0,
TA = 125 °C
ICBO
10
A
Base cut - off current
VEB = 3 V, VCE = 60 V
IBL
20
nA
Emitter-base cut-off current
VEB = 3 VDC, IC = 0
IEBO
100
nA
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Current gain - bandwidth
product
VCE = 20 V, IC = 20 mA,
f = 100 MHz
fT
300
MHz
Output capacitance
VCB = 10 V, f = 1 MHz,
IE = 0
Cob
8pF
Input capacitance
VEB = 0.5 V, f = 1 MHz,
IC = 0
Cibo
25
pF
Noise figure
VCE = 10 V, IC = 100 A,
RS = 1 k, f = 1 kHz
NF
4.0
dB
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222A-HF | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:Small Signal Transistor |
| MMBT2222AK | 功能描述:兩極晶體管 - BJT NPN EPITAXIAL SILICON RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222AK | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| MMBT2222AL-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| MMBT2222AL-AL3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
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