- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96086 > MMBT1010LT1G (ON SEMICONDUCTOR) 100 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 PDF資料下載
參數(shù)資料
| 型號： | MMBT1010LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | CASE 318D-04, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | MMBT1010LT1G |
MMBT1010LT1 MSD1010T1
http://onsemi.com
5
PACKAGE DIMENSIONS
CASE 318–08
ISSUE AF
SOT–23 (TO–236)
D
J
K
L
A
C
B S
H
G
V
3
1
2
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102 0.1197
2.80
3.04
INCHES
B 0.0472 0.0551
1.20
1.40
C 0.0350 0.0440
0.89
1.11
D 0.0150 0.0200
0.37
0.50
G 0.0701 0.0807
1.78
2.04
H 0.0005 0.0040
0.013
0.100
J 0.0034 0.0070
0.085
0.177
K 0.0140 0.0285
0.35
0.69
L 0.0350 0.0401
0.89
1.02
S 0.0830 0.1039
2.10
2.64
V 0.0177 0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSD1328-RT3 | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MSD1819A-RT3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MSD42T1G | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MSD52-16 | 3 PHASE, 1600 V, SILICON, BRIDGE RECTIFIER DIODE |
| MSD52-16 | 3 PHASE, 1600 V, SILICON, BRIDGE RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT1010T1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT |
| MMBT1015 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
| MMBT1015_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
| MMBT1015-BL-AC3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
| MMBT1015-BL-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。