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參數(shù)資料
| 型號： | MMBT1010LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | CASE 318D-04, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | MMBT1010LT1G |
MMBT1010LT1 MSD1010T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Condition
Min
Max
Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA, IB = 0
15
—
Vdc
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10 A, IE = 0
5.0
—
Vdc
Collector-Base Cutoff Current
ICBO
VCB = 20 V, IE = 0
—
0.1
A
Collector-Emitter Cutoff Current
ICEO
VCE = 10 V, IB = 0
—
100
A
DC Current Gain
hFE1(2)
VCE = 5 V, IC = 100 mA
300
600
—
Collector-Emitter Saturation Voltage
VCE(sat)(2)
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 100 mA, IB = 10 mA
—
0.1
0.19
Vdc
Base-Emitter Saturation Voltage
VBE(sat)(2)
IC = 100 mA, IB = 10 mA
—
1.1
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Width
≤ 300 s, D.C. ≤ 2%.
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