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參數資料
| 型號： | MMBR941 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Low Noise High-Freqency Transistors(低噪音高頻率NPN晶體管) |
| 中文描述： | 低噪聲，高頻數晶體管（低噪音高頻率npn型晶體管） |
| 文件頁數： | 3/14頁 |
| 文件大?。?/td> | 275K |
| 代理商： | MMBR941 |
3
MMBR941 MRF947 SERIES
MOTOROLA RF DEVICE DATA
PERFORMANCE CHARACTERISTICS
Conditions
Symbol
MMBR941LT1, T3
MRF947 Series
Unit
Min
Typ
Max
Min
Typ
Max
Insertion Gain
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
|S21|2
—
—
14
8.0
—
—
—
—
14
10.8
—
—
dB
Maximum Unilateral Gain (1)
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
GU max
—
—
16
10
—
—
—
—
14.8
11.6
—
—
dB
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
NFMIN
—
—
1.5
2.1
—
—
—
—
1.5
2.1
—
—
dB
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
GNF
—
—
14
8.5
—
—
—
—
14
10
—
—
dB
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NOTE:
1. Maximum Unilateral Gain is GUmax =
NF50
—
1.9
2.8
—
1.9
2.8
dB
|
Figure 1. Collector–Base Capacitance
versus Voltage
Figure 2. DC Current Gain versus
Collector Current
Figure 3. Gain Bandwidth Product versus
Collector Current
Figure 4. Insertion Gain versus Collector Current
TYPICAL CHARACTERISTICS
MMBR941LT1, T3; MMBR941BLT1
IC, COLLECTOR CURRENT (mA)
VCE = 6 V
f = 1 GHz
24
20
16
12
8
4
01
2
3
5
10
7
20
100
70
50
30
VCE = 6 V
VCE = 6 V
f = 1 GHz
IC, COLLECTOR CURRENT (mA)
12
10
8
6
4
2
01
2
3
5
10
7
20
100
70
50
30
IC, COLLECTOR CURRENT (mA)
200
100
70
50
30
20
101
2
3
5
10
7
20
100
70
50
30
300
1
2
VCB, REVERSE VOLTAGE (V)
3
5
7
10
1
0.7
0.5
0.1
0.2
0.3
f
h
C
MMBR941LT1, T3
f = 1 MHz
|S21|2
(1–|S11|2)(1–|S22|2)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBR941_99 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon Low Noise, High-Frequency Transistors |
| MMBR941BLT1 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, TO-236 |
| MMBR941LT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon Low Noise, High-Frequency Transistors |
| MMBR941LT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon Low Noise, High-Frequency Transistors |
| MMBR941MLT1 | 制造商:Microsemi Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT |
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