參數(shù)資料
型號(hào): MMBFJ212
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: N-Channel RF Amplifier
中文描述: VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 199K
代理商: MMBFJ212
5
G
D
S
J210
J211
J212
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and
applications where Process 50 is not adequate. Sufficient
gain and low noise for sensitive receivers. Sourced from
Process 90.
MMBFJ210
MMBFJ211
MMBFJ212
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25°C unless otherwise noted
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
DG
V
GS
I
GF
T
J
,T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
- 25
10
V
V
mA
°
C
-55 to +150
Symbol
Characteristic
Max
Units
J210-212
350
2.8
125
357
*MMBFJ210-212
225
1.8
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
556
SOT-23
Mark: 62V / 62W / 62X
GSD
TO-92
1997 Fairchild Semiconductor Corporation
NOTE: Source & Drain
are interchangeable
J
J210/J211/J212/MMBFJ210/J211/J212, Rev A
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