參數(shù)資料
型號: MMBFJ270
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: P-Channel Switch
中文描述: P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SOT-23, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 46K
代理商: MMBFJ270
2004 Fairchild Semiconductor Corporation
Rev. A, February 2004
M
Absolute Maximum Ratings*
T
a
=25
°
C unless otherwise noted
Symbol
V
DG
Drain-Gate Voltage
V
GS
Gate-Source Voltage
I
GF
Forward Gate Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)GSS
Gate-Source Breakdwon Voltage
I
GSS
Gate Reverse Current
V
GS(off)
Gate-Source Cutoff Voltage
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current *
Small Signal Characteristics
gfs
Forward Transferconductance
goss
Common- Source Output Conductance
Thermal Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
P
D
Total Device Dissipation
Derate above 25
°
C
R
θ
JA
Thermal Resistance, Junction to Ambient
Parameter
Ratings
-30
30
50
-55 ~ 150
Units
V
V
mA
°
C
Test Condition
Min.
Max.
Units
I
G
= -1.0
μ
A, V
DS
= 0
V
GS
= -20V, V
DS
= 0
V
DS
= -15V, I
D
= 1.0nA
30
V
pA
V
200
2.0
0.5
V
DS
= -15V, V
GS
= 0
-2.0
-15
mA
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz
6000
15000
200
μ
mhos
μ
mhos
Parameter
Max.
225
1.8
556
Units
mW
mW/
°
C
°
C/W
MMBFJ270
P-Channel Switch
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
Sourced from process 88.
1. Drain 2. Gate 3. Source
D
S
G
SOT-23
Mark: 61S
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