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參數(shù)資料
| 型號： | MMBFJ271 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Switch |
| 中文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 182K |
| 代理商： | MMBFJ271 |
2006 Fairchild Semiconductor Corporation
MMBFJ271 Rev. A
1
www.fairchildsemi.com
M
tm
June 2006
MMBFJ271
P-Channel Switch
Features
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
Sourced from process 88.
Absolute Maximum Ratings *
T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
- These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
(Note3)
On Characteristics
(Note3)
Note3 : Short duration test pulse used to minimize self-heating effect
.
Symbol
Parameter
Value
Units
V
DG
Drain-Gate Voltage
-30
V
V
GS
Gate-Source Voltage
30
V
I
GF
Forward Gate Current
50
mA
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 ~ 150
°
C
Symbol
Parameter
Value
Units
P
D
Total Device Dissipation
Derate above 25
°
C
225
1.8
mW
mW/
°
C
R
θ
JA
Thermal Resistance, Junction to Ambient
556
°
C/W
Symbol
Parameter
Test Condition
MIN
MAX
Units
V
(BR)GSS
Gate-Source Breakdwon Voltage
I
G
= 1.0
μ
A, V
DS
= 0
30
V
I
GSS
Gate Reverse Current
V
GS
= 20V, V
DS
= 0
200
pA
V
GS(off)
Gate-Source Cutoff Voltage
V
DS
= -15V, I
D
= -1.0nA
1.5
4.5
V
I
DSS
Zero-Gate Voltage Drain Current *
V
DS
= -15V, V
GS
= 0
-6.0
-50
mA
gfs
Forward Transferconductance
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz
8000
18000
μ
mhos
goss
Common- Source Output Conduc-
tance
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz
500
μ
mhos
Mark : 62T
D
S
G
SOT-23
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| MMBFJ271_Q | 功能描述:JFET P-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBFJ304 | 功能描述:JFET TO-236AB JFET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBFJ305 | 功能描述:射頻JFET晶體管 TO-236AB JFET RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| MMBFJ305_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel RF Amplifier |
| MMBFJ309 | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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