參數(shù)資料
型號： MMBF4416A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： N-Channel RF Amplifier
中文描述： UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
封裝： SOT-23, 3 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 45K
代理商： MMBF4416A
2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
M
Absolute Maximum Ratings *
T
A
=25
°
C
unless otherwise noted
Symbol
V
DG
Drain-Gate Voltage
V
GS
Gate-Source Voltage
I
GF
Forward Gate Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage
I
GSS
Gate Reverse Current
V
GS
(off)
Gate Source Cut-off Voltage
V
GS
Gate Source Voltage
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current
V
GS
(f)
Gate-Source Forward Voltage
Small Signal Characteristics
g
fs
Forward Transfer Conductance *
g
os
Output Conductance *
C
iss
Input Capacitance
Reverse Transfer Capacitance
C
oss
Output Capacitance
NF
Noise Figure
* Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2%
Thermal Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
P
D
Total Device Dissipation
Derate above 25
C
R
θ
JA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6”
×
1.6”
×
0.06”.
Parameter
Value
35
-35
10
- 55 ~ 150
Units
V
V
mA
°
C
Test Condition
Min.
Typ.
Max.
Units
V
DS
= 0, I
G
= 1.0
μ
A
V
GS
= -20V, V
DS
= 0
V
DS
= 15V, I
D
= 1.0nA
V
DS
= 15V, I
D
= 500
μ
A
-35
V
pA
V
V
-100
-6.0
-5.5
-2.5
-1
V
GS
= 15V, V
GS
= 0
V
DS
= 0, I
G
= 1.0mA
5
15
1
μ
A
V
V
DS
= 15V, V
GS
= 0, f = 1.0kHz
V
DS
= 15V, V
GS
= 0, f = 1.0kHz
V
DS
= 15V, V
GS
= 0, f = 1.0MHz
V
DS
= 15V, V
GS
= 0, f = 1.0MHz
V
DS
= 15V, V
GS
= 0, f = 1.0MHz
V
DS
= 15V, V
GS
= 0, I
D
= 5mA,
R
g
= 1k
, f = 400MHz
4500
7500
50
4.0
0.8
2.0
4.0
μ
mhos
μ
mhos
P
F
P
F
P
F
dB
Crss
Parameter
Max.
225
1.8
556
Units
mW
mW/
°
C
°
C/W
MMBF4416A
N-Channel RF Amplifier
This device is designed for RF amplifiers.
Sourced from process 50.
SOT-23
Mark: 6BG
D
S
G
相關(guān)PDF資料
PDF描述
MMBF4416 N-Channel RF Amplifiers
MMBF4416LT1 JFET VHF/UHF Amplifier Transistor
MMBF4416LT1 JFET VHF/UHF Amplifier Transistor
MMBF5103 N-Channel Switch
MMBF5434 N-Channel Switch
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBF4416A_Q 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
MMBF4416A_S00Z 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
MMBF4416LT1 功能描述:JFET 30V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
MMBF4416LT1_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:JFET VHF/UHF Amplifier Transistor N-Channel
MMBF4416LT1G 功能描述:JFET 30V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*