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參數資料
| 型號： | MMBF5103 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Switch |
| 中文描述： | N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 44K |
| 代理商： | MMBF5103 |
2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
M
Absolute Maximum Ratings*
T
a
=25
°
C
unless otherwise noted
Symbol
V
DG
Drain-Gate Voltage
V
GS
Gate-Source Voltage
I
GF
Forward Gate Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage
I
GSS
Gate Reverse Current
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
1.0%
Thermal Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
P
D
Total Device Dissipation
Derate above 25
°
C
R
θ
JA
Thermal Resistance, Junction to Ambient
Parameter
Value
40
-40
50
- 55 ~ 150
Units
V
V
mA
°
C
Test Condition
Min.
Max.
Units
I
G
= 1.0
μ
A, V
DS
= 0
V
GS
= -15V, V
DS
= 0
V
GS
= -15V, V
DS
= 0, T
a
= 125
°
C
V
DS
= 20V, I
D
= 1.0nA
I
G
= 1.0mA, V
DS
= 0
-40
V
pA
nA
V
V
-200
-500
-2.7
1.0
V
GS(off)
V
GS(f)
On Characteristics
I
DSS
Small Signal Characteristics
C
ISS
C
rss
Gate-Source Cutoff Voltage
Gate-Source Forward Voltage
-1.2
Zero-Gate Voltage Drain Current *
V
DS
= 15V, V
GS
= 0
10
40
mA
Input Capacitance
Reverse Transfer Capacitance
V
DS
= 15V, V
GS
= 0, f = 1.0MHz
V
GS
= -15V, f = 1.0MHz
16
6.0
pF
pF
Parameter
Max.
350
2.8
556
Units
mW
mW/
°
C
°
C/W
MMBF5103
N-Channel Switch
This device is designed for low level analog switching, sample and
hold circuits and chopper stabailzed amplifiers.
Sourced from Process 51.
See J111 for characteristics.
1. Drain 2. Source 3. Gate
D
S
G
SOT-23
Mark: 66A
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBF5103_Q | 功能描述:JFET N-Ch amplifier Lo Freq/Lo Noise RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5434 | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5434_Q | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5457 | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5457_Q | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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