參數資料
型號: MMBF5434
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: N-Channel Switch
中文描述: N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: SUPERSOT-3
文件頁數: 1/4頁
文件大?。?/td> 73K
代理商: MMBF5434
2003 Fairchild Semiconductor Corporation
Rev. A, February 2003
M
Absolute Maximum Ratings *
T
A
=25
°
C
unless otherwise noted
Symbol
V
DG
Drain-Gate Voltage
V
GS
Gate-Source Voltage
I
GF
Forward Gate Current
T
J
, T
stg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)GSS
Gate-Source Breakdwon Voltage
I
GSS
Gate Reverse Current
V
GS
(off)
Gate-Source Cutoff Voltage
I
D
(off)
Drain Cutoff Voltag
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current *
r
DS
(on)
Drain-Source On Resistance
Small Signal Characteristics
C
iss
Input Capacitance
C
rss
Reverse Transfer Capacitance
* Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
Parameter
Value
25
-25
10
-55 ~ +150
Units
V
V
mA
°
C
Test Condition
Min.
Max.
Units
I
G
= -1.0
μ
A, V
DS
= 0
V
GS
= -15V, V
DS
= 0
V
DS
= 5.0V, I
D
= 3.0nA
V
DS
= 5.0, V
GS
= -10V
-25
V
nA
V
pA
200
-4.0
200
-1.0
V
DS
= 15V, I
GS
= 0
V
DS
= 0, I
D
= 10mA
30
mA
10
V
DS
= 0, V
GS
= 10V, f = 1.0MHz
V
DS
= 0, V
GS
= 10V, f = 1.0MHz
30
15
pF
pF
MMBF5434
N-Channel Switch
This device is designed for digital switching
applications where very low on resistance is
mandatory.
Sourced from Process 58.
1. Drain 2. Source 3. Gate
1
2
3
SuperSOT-3
Marking: 61Z
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