參數(shù)資料
型號: MMBD6050-V-GS18
廠商: VISHAY SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.2 A, SILICON, SIGNAL DIODE
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 1/6頁
文件大?。?/td> 137K
代理商: MMBD6050-V-GS18
MMBD6050-V
Document Number 85735
Rev. 1.4, 12-Aug-10
Vishay Semiconductors
www.vishay.com
1
12
3
16923
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Small Signal Switching Diode
Features
Silicon Epitaxial Planar Diode
Fast switching diode in case SOT-23,
especially suited for automatic insertion.
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOT-23
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) FR-5 = 1.0 x 0.75 x 0.062 in.
2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5 % alumina
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Part
Ordering code
Marking
Remarks
MMBD6050-V
MMBD6050-V-GS18 or MMBD6050-V-GS08
5AM
Tape and Reel
Parameter
Test condition
Symbol
Value
Unit
Continuous reverse voltage
VR
70
V
Forward current
IF
200
mA
Peak forward surge current
IFSM
500
mA
Maximum power dissipation
on FR-5 board 1)
Ptot
225
mW
Derate above 25 °C
Ptot
1.8
mW/°C
Maximum power dissipation
on Alumina substrate 2)
Ptot
300
mW
Derate above 25 °C
Ptot
2.4
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance FR-5
RthJA
556
°C;/W
Junction to ambient Alumina
RthJA
417
°C/W
Maximum junction temperature
Tj
150
°C
Storage temperature range
Tstg
- 55 to + 150
°C
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