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參數(shù)資料
| 型號(hào)： | MMBD4448HTAT-7 |
| 廠商： | DIODES INC |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.25 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 54K |
| 代理商： | MMBD4448HTAT-7 |
DS30263 Rev. B-2
1 of 2
MMBD4448HT /HTA /HTC /HTS
SURFACE MOUNT FAST SWITCHING DIODE
Case: SOT-523, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: See Diagram
Weight: 0.002 grams (approx.)
Ordering Information, see Sheet 2
Mechanical Data
A
B C
G
M
L
J
D
H
N
K
TOP VIEW
Features
Maximum Ratings@ TA = 25°C unless otherwise specified
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout.
2. Short duration pulse test used to minimize self-heating effect.
Electrical Characteristics@ TA = 25°C unless otherwise specified
NEW
P
RODUCT
MMBD4448HTS Marking: AB
MMBD4448HTC Marking: A7
MMBD4448HTA Marking: A6
MMBD4448HT Marking: A3
Ultra-Small Surface Mount Package
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80
V
RMS Reverse Voltage
VR(RMS)
57
V
Forward Continuous Current
IFM
500
mA
Average Rectified Output Current
IO
250
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
IFSM
4.0
2.0
A
Power Dissipation (Note 1)
Pd
150
mW
Thermal Resistance Junction to Ambient (Note 1)
RqJA
833
°C/W
Operating and Storage Temperature Range
Tj ,TSTG
-65 to +150
°C
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V(BR)R
80
VIR = 2.5ma
Forward Voltage (Note 2)
VF
0.62
0.72
0.855
1.0
1.25
V
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
Leakage Current (Note 2)
IR
100
50
30
25
nA
mA
nA
VR = 70V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
Junction Capacitance
Cj
3.5
pF
VR = 6V, f = 1.0MHz
Reverse Recovery Time
trr
4.0
ns
VR = 6V, IF = 5mA
SOT-523
Dim Min Max Typ
A
0.15 0.30 0.22
B
0.75 0.85 0.80
C
1.45 1.75 1.60
D
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
J
0.00 0.10 0.05
K
0.60 0.80 0.75
L
0.10 0.30 0.22
M
0.10 0.20 0.12
N
0.45 0.65 0.50
All Dimensions in mm
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD4448HTA-TP | 功能描述:二極管 - 通用，功率，開關(guān) 80V 500mA 3.5pF RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD4448HTC | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
| MMBD4448HTC-7 | 功能描述:整流器 150MW 80V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MMBD4448HTC-7-F | 功能描述:整流器 150MW 80V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MMBD4448HTM | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE ARRAY |
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