參數(shù)資料
型號(hào): MMBD4448DW
廠商: LITE-ON SEMICONDUCTOR CORP
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 0.25 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: GREEN, PLASTIC PACKAGE-6
文件頁數(shù): 1/4頁
文件大小: 185K
代理商: MMBD4448DW
MMBD4448DW
SURFACE MOUNT
FAST SWITCHING DIODE
REVERSE VOLTAGE – 75 Volts
FORWARD CURRENT – 0.25 Ampere
FEATURES
Fast switching speed
Ideally suited for automatic insertion
For general purpose switching applications
MECHANICAL DATA
Case: SOT-363 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Moisture sensitivity: Level 1 per J-STD-020D
Lead free in RoHS 2002/95/EC compliant
SOT-363
SOT-363
Dim.
Min.
Max.
A
0.15
0.35
B
1.15
1.35
C
2.15
2.45
D
0.65 TYP.
E
0.40 REF.
H
2.00
2.20
J
0.00
0.10
K
0.90
1.10
L
0.525 REF.
M
0.08
0.15
Dimensions in
millimeter
Maximum Ratings & Thermal Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Symbol
MMBD4448DW
Units
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75
V
RMS Reverse Voltage
VR(RMS)
53
V
Forward Continuous Current
IFM
300
mA
Average Rectified Output Current
IO
250
mA
Repetitive Peak Forward Current
@t=1us
@t=1s
IFSM
4
1.5
A
Power Dissipation
PD
200
mW
Thermal Resistance Junction to Ambient
RΘJA
625
/W
Operating Temperature Range
TJ
150
Storage Temperature Range
TSTG
-65~+150
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
IR = 10uA
VBR
75
--
V
Maximum Forward Voltage
IF = 5mA
IF = 10mA
IF = 50mA
IF = 150mA
VF
620
--
720
855
1000
1250
mV
Maximum DC Reverse Current
at Rated DC Blocking Voltage
VR = 75V
VR = 20V
IR
--
2.5
0.025
uA
Typical Diode Capacitance
VR =0V,f=1MHz
CD
--
4
pF
Reverse Recovery time
Irr=1mA,
IR=IF=10mA
RL=100
trr
--
4
ns
REV. 1, Oct-2010, KSYR69
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