參數(shù)資料
型號(hào): MM908E625
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: Integrated Quad Half H-Bridge with Power Supply, Embedded MCU, and LIN Serial Communication(集成四半H橋,帶電源、嵌入式MCU和LIN串行通信功能)
中文描述: 綜合四半僅符合電源橋,嵌入式微控制器和LIN串行通信(集成四半魔橋,帶電源,嵌入式微控制器和林串行通信功能)
文件頁(yè)數(shù): 30/40頁(yè)
文件大小: 595K
代理商: MM908E625
908E625
30
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
HBx_H—High-Side On/Off Bits
These read/write bits turn on the high-side MOSFETs. Reset
clears the HBx_H bits.
1 = High-side MOSFET turned on for half-bridge output x.
0 = High-side MOSFET turned on for half-bridge output x.
Half-Bridge Current Limitation
Each low-side MOSFET offers a current limit or constant
current feature. This features is realized by a pulse width
modulation on the low-side MOSFET. The pulse width
modulation on the outputs is controlled by the FGEN input and
the load characteristics. The FGEN input provides the PWM
frequency, whereas the duty cycle is controlled by the load
characteristics.
The recommended frequency range for the FGEN and the
PWM is 0.1 kHz to 20 kHz.
Functionality
Each low-side MOSFET switches off if a current above the
selected current limit was detected. The 908E625 offers five
different current limits (refer to
Table 5
,
page 33, for current limit
values). The low-side MOSFET switches on again if a rising
edge on the FGEN input was detected (
Figure 16
).
Figure 16. Half-Bridge Current Limitation
Coil Current
Half-Bridge
Low-Side Output
FGEN Input
(MCU PWM
Signal)
Minimum 50 μs
H-Bridge low-side
MOSFET will be switched
off if select current limit is
reached.
H-Bridge low-side
MOSFET will be turned on
with each rising edge of
the FGEN input.
t (μs)
t (μs)
t (μs)
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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