- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378672 > MLD1N06CL (MOTOROLA INC) VOLTAGE CLAMPED CURRENT LIMITING MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MLD1N06CL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | VOLTAGE CLAMPED CURRENT LIMITING MOSFET |
| 中文描述： | 1 A, 59 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 163K |
| 代理商： | MLD1N06CL |
1
Motorola TMOS Power MOSFET Transistor Device Data
SMARTDISCRETES
Internally Clamped, Current Limited
N–Channel Logic Level Power MOSFET
The MLD1N06CL is designed for applications that require a rugged power switching
device with short circuit protection that can be directly interfaced to a microcontrol unit
(MCU). Ideal applications include automotive fuel injector driver, incandescent lamp
driver or other applications where a high in–rush current or a shorted load condition could
occur.
This logic level power MOSFET features current limiting for short circuit protection,
integrated Gate–Source clamping for ESD protection and integral Gate–Drain clamping
for over–voltage protection and Sensefet technology for low on–resistance. No additional
gate series resistance is required when interfacing to the output of a MCU, but a 40 k
gate pulldown resistor is recommended to avoid a floating gate condition.
The internal Gate–Source and Gate–Drain clamps allow the device to be applied
without use of external transient suppression components. The Gate–Source clamp
protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The
Gate–Drain clamp protects the MOSFET drain from the avalanche stress that occurs
with inductive loads. Their unique design provides voltage clamping that is essentially
independent of operating temperature.
The MLD1N06CL is fabricated using Motorola’s SMARTDISCRETES
technology which
combines the advantages of a power MOSFET output device with the on–chip protective
circuitry that can be obtained from a standard MOSFET process. This approach offers an
economical means of providing protection to power MOSFETs from harsh automotive and
industrial environments. SMARTDISCRETES
devices are specified over a wide tempera-
ture range from –50
°
C to 150
°
C.
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
ID
IDM
Clamped
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Clamped
Vdc
±
10
Vdc
Drain Current — Continuous
— Single Pulse
Self–limited
1.8
Adc
Apk
Total Power Dissipation
PD
40
Watts
Operating and Storage Temperature Range
TJ, Tstg
ESD
–50 to 150
°
C
Electrostatic Discharge Voltage (Human Model)
2.0
kV
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
— Junction to Ambient
— Junction to Ambient (1)
R
θ
JC
R
θ
JA
R
θ
JA
TL
3.12
100
71.4
°
C/W
Maximum Lead Temperature for Soldering Purposes,
1/8
″
from case for 5 sec.
260
°
C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
Single Pulse Drain–to–Source Avalanche Energy
Starting TJ = 25
°
C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
SMARTDISCRETES is a trademark of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
EAS
80
mJ
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MLD1N06CL/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
VOLTAGE CLAMPED
CURRENT LIMITING
MOSFET
62 VOLTS (CLAMPED)
RDS(on) = 0.75 OHMS
CASE 369A–13, Style 2
DPAK Surface Mount
D
G
S
R1
R2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MLP2N06CL | VOLTAGE CLAMPED CURRENT LIMITING MOSFET |
| MMBF0202PLT1 | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MMBF0202PLT1 | Power MOSFET 300 mAmps, 20 Volts |
| MMBR4957LT1 | PNP Silicon High-Frequency Transistor |
| MMBR4957LT3 | PNP Silicon High-Frequency Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MLD1N06CLT4 | 功能描述:MOSFET 62V 1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MLD1N06CLT4G | 功能描述:MOSFET 62V 1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MLD1N06CLT4G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MLD2016S1R0MTD25 | 功能描述:INDUCTORS FOR POWER CIRCUITS,AUT 制造商:tdk corporation 系列:MLD 包裝:剪切帶（CT） 零件狀態(tài):在售 類型:多層 材料 - 磁芯:鐵氧體 電感:1μH 容差:±20% 額定電流:1.1A 屏蔽:屏蔽 DC 電阻（DCR）:156 毫歐最大 不同頻率時(shí)的 Q 值:- 等級(jí):AEC-Q200 工作溫度:-40°C ~ 125°C 頻率 - 測(cè)試:2MHz 安裝類型:表面貼裝 封裝/外殼:0806（2016 公制） 供應(yīng)商器件封裝:0806（2016 公制） 大小/尺寸:0.079" 長(zhǎng) x 0.063" 寬（2.00mm x 1.60mm） 高度 - 安裝（最大值）:0.039"（1.00mm） 標(biāo)準(zhǔn)包裝:1 |
| MLD2016S1R5MTD25 | 功能描述:INDUCTORS FOR POWER CIRCUITS,AUT 制造商:tdk corporation 系列:MLD 包裝:剪切帶（CT） 零件狀態(tài):在售 類型:多層 材料 - 磁芯:鐵氧體 電感:1.5μH 容差:±20% 額定電流:1A 屏蔽:屏蔽 DC 電阻（DCR）:195 毫歐最大 不同頻率時(shí)的 Q 值:- 等級(jí):AEC-Q200 工作溫度:-40°C ~ 125°C 頻率 - 測(cè)試:2MHz 安裝類型:表面貼裝 封裝/外殼:0806（2016 公制） 供應(yīng)商器件封裝:0806（2016 公制） 大小/尺寸:0.079" 長(zhǎng) x 0.063" 寬（2.00mm x 1.60mm） 高度 - 安裝（最大值）:0.039"（1.00mm） 標(biāo)準(zhǔn)包裝:1 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。