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參數(shù)資料
| 型號(hào)： | MMBF0202PLT1 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| 中文描述： | 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 190K |
| 代理商： | MMBF0202PLT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
$ !
"
# !""# !"
Part of the GreenLine
Portfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VGS
ID
ID
IDM
20
Vdc
Gate–to–Source Voltage — Continuous
±
20
Vdc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 70
°
C
Drain Current
— Pulsed Drain Current (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C(1)
Operating and Storage Temperature Range
300
240
750
mAdc
PD
225
mW
TJ, Tstg
R
θ
JA
TL
– 55 to 150
°
C
Thermal Resistance — Junction–to–Ambient
625
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
DEVICE MARKING
P3
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMBF0202PLT1
7
″
12 mm embossed tape
3000
MMBF0202PLT3
13
″
12 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
(Replaces MMBF0202P/D)
Order this document
by MMBF0202PLT1/D
SEMICONDUCTOR TECHNICAL DATA
CASE 318–07, Style 21
SOT–23 (TO–236AB)
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 1.4 OHM
Motorola Preferred Device
1
2
3
3 DRAIN
1
GATE
2 SOURCE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF102 | 功能描述:射頻JFET晶體管 N-CHANNEL RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| MMBF102LT1 | 制造商:Motorola Inc 功能描述: |
| MMBF1374T1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMBF170 | 功能描述:MOSFET N-Ch Enhance RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF170 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
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